Cverhemkuyu digital memory can be output to market
December 23, 2009 – 12:00 am
Engineers from the State University of Arizona have developed a new method to significantly increase the capacity of memory modules used in modern electronics. A group of researchers from the Center for Applied nanoissledovany at the University of Arizona unveiled the first prototypes of the so-called ionic memory technologies.
According to the developers, the new method allows you to create ultrahigh-density memory that can be advantageous for portable cameras, laptops and players. The most valuable in the established technology is that it is based entirely on material already used in modern circuitry. “This approach opens the door to affordable and extremely capacious storage solutions” – said one of the developers of technology, Michael Kozitskii.
He says that the key advantage of the ion storage in two points: first, the cell size here is much less than the currently used modules, and secondly, the new modules allow you to create “bundles” memory, where layers of storage any data placed in tiers one above another. Thus, on a single chip can be dozens or even hundreds of individual layers.
The developers emphasize that they seek – it is not a conceptual project, but actually existing development, which can be in the presence of finance and small improvements to market, said SyberSecurity.
“This is a significant achievement, since the technology is in development for over two years, represents a new type of memory that can replace flash chips for new solutions based on the most common components. We changed a few techniques of production, added new components, but the basis remains the same – silicon “, – said Kozitskii.
According to the developer, the memory removes some significant limitations present in today’s samples. First, the chips store more data on a smaller scale, and secondly, the cost of storing one gigabyte of data is a record low in the third, in the future chips could be applied as a single unit of computer memory, is the possibility of combining hard disk and RAM.
The only drawback is the memory of its complex technical organization – each cell there must have element for data storage and microdevices for access to information. Such an organization allows an individual to work with each memory cell. In addition, the new memory chips, and even use silicon, but not as a single substrate on which cells are placed, but as a three-dimensional structure to accommodate the cells inside. Such an organization requires additional layers in the module.
“Instead of placing one transistor per cell, we have created individual cells with a diode to control access, the only way we can create a module of several layers, “- said the engineer.
